參數(shù)資料
型號(hào): FM220-N
廠商: 美麗微半導(dǎo)體有限公司
英文描述: CONN HEADR .05 40POS DL T/H R/A
中文描述: 肖特基二極管芯片-硅外延式龍門
文件頁數(shù): 1/2頁
文件大?。?/td> 72K
代理商: FM220-N
FM220-N THRU FM2100-N
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0017 ounce, 0.057 gram
(V)
(V)
(V)
(V)
(
o
C)
FM220-N
SK22
20
14
20
FM230-N
SK23
30
21
30
FM240-N
SK24
40
28
40
FM250-N
SK25
50
35
50
FM260-N
SK26
60
42
60
FM280-N
SK28
80
56
80
FM2100-N
S210
100
70
100
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
0.70
-55 to +125
-55 to +150
0.85
0.50
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
2.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
50
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
10
mA
Thermal resistance
Junction to ambient
R
q
JA
75
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
160
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.185(4.8)
0.173(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.053(1.3)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA-N
0.067(1.7)
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