參數資料
型號: FM2G75US60
英文描述: TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C)
中文描述: 晶體管| IGBT功率模塊|半橋| 600V的五(巴西)國際消費電子展| 75A條一(c)
文件頁數: 3/9頁
文件大小: 713K
代理商: FM2G75US60
2000 Fairchild Semiconductor International
FM2G75US60 Rev. A
F
Electrical Characteristics of DIODE
T
C
= 25
°
C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
Test Conditions
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
90
130
7
10
315
650
Max.
2.8
--
130
--
9
--
590
--
Units
V
FM
Diode Forward Voltage
I
F
= 75A
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
T
C
= 25
°
C
T
C
= 100
°
C
V
t
rr
Diode Reverse Recovery Time
I
F
= 75A
di / dt = 150 A/us
ns
I
rr
Diode Peak Reverse Recovery
Current
A
Q
rr
Diode Reverse Recovery Charge
nC
Symbol
R
θ
JC
R
θ
JC
R
θ
CS
Weight
Parameter
Typ.
--
--
0.05
--
Max.
0.4
0.9
--
190
Units
°
C
/
W
°
C
/
W
°
C
/
W
g
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink (Conductive grease applied)
Weight of Module
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