參數(shù)資料
型號: FMBM5551
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: NPN General Purpose Amplifier
中文描述: 600 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-6
文件頁數(shù): 2/4頁
文件大?。?/td> 162K
代理商: FMBM5551
2
www.fairchildsemi.com
FMBM5551 Rev. D
F
Electrical Characteristics
(
Continued)
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Max
Units
h
FE3
DIVID3
DC Current Gain
V
CE
= 5V, I
C
= 50mA
h
FE3
(Die1)/h
FE3
(Die2)
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 5V, I
C
= 10mA
V
BE(on)
(Die1)-V
BE(on)
(Die2)
30
Variation Ratio of h
FE3
Between Die 1 and Die 2
Collector-Emitter Saturation Voltage
0.9
1.1
V
CE(sat)
0.15
0.2
V
V
V
BE(sat)
Base-Emitter Saturation Voltage
1
1
V
V
V
BE(on)
DEL
Base-Emitter On Voltage
1
V
Difference of V
BE(on)
Between Die1 and Die 2
Small Signal Characteristics
-8
8
mV
C
ob
C
ib
f
T
NF
Output Capacitance
V
CB
= 10V, f = 1MHz
V
CB
= 0.5V, f = 1MHz
V
CE
= 10V, I
C
= 10mA, f = 100MHz
V
CE
= 5V, I
C
= 200
μ
A, f = 1MHz,
R
S
= 20K
, B = 200Hz
V
CE
= 10V, I
C
= 1.0mA, f = 1.0KHz
6
pF
Input Capacitance
20
pF
Current Gain Bandwidth Product
100
300
MHz
Noise Figure
8
dB
h
fe
Small Signal Current Gain
50
250
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