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參數(shù)資料
| 型號： | FMBSA56 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP General Purpose Amplifier |
| 中文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6, 6 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 87K |
| 代理商： | FMBSA56 |
2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
F
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Collector Saturation Region
vs Collector Current
0.001
0.01
0.1
50
100
150
200
250
300
I - COLLECTOR CURRENT (A)
h
F
- 40 °C
V = 1V
125 °C
25 °C
Voltage vs Collector Current
10
100
0
0.2
0.4
0.6
0.8
I - COLLECTOR CURRENT (mA)
V
C
β
= 10
- 40
°
C
125
°
C
25
°
C
Voltage vs Collector Current
10
100
1000
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
B
β
= 10
- 40
°
C
125
°
C
25
°
C
β
Collector Current
0.1
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
I - COLLECTOR CURRENT (mA)
V
B
V = 1V
- 40
°
C
125
°
C
25
°
C
25
50
75
100
125
0.001
0.01
0.1
1
10
T - AMBIENT TEMPERATURE (o
I
C
V = 60V
0.1
1
10
100
100
V - COLLECTOR VOLTAGE (V)
C
C
f = 1.0 MHz
ib
C
ob
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