參數(shù)資料
型號: FMC6G15US60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Compact & Complex Module
中文描述: 15 A, 600 V, N-CHANNEL IGBT
封裝: 21PM-AA, 21 PIN
文件頁數(shù): 4/9頁
文件大?。?/td> 657K
代理商: FMC6G15US60
2001 Fairchild Semiconductor Corporation
FMC6G15US60 Rev. A3
F
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
5
10
15
20
25
30
35
40
45
50
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
0
5
10
15
20
25
30
35
40
45
Common Emitter
V
GE
= 15V
T
C
= 25
━━
T
C
= 125
------
C
C
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
30A
15A
I
C
= 8A
Common Emitter
V
GE
= 15V
C
C
Case Temperature, T
C
[
]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
30A
15A
I
C
= 7A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
30A
15A
I
C
= 7A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
24
0.1
1
10
100
1000
Duty cycle : 50%
T
= 100
Power Dissipation = 25W
V
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
相關(guān)PDF資料
PDF描述
FMC6G20US60 Multi-Function Generator RoHS Compliant: NA
FMC6G30US60 Function Generator; Bandwidth Max:120MHz; Amplitude Accuracy :0.01dB; Frequency Max:120MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
FMC6G50US60 Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
FMC7G15US60 Compact & Complex Module
FMC7G20US60 Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
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FMC6G20US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC6G30US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC6G50US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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