參數(shù)資料
型號： FMC6G50US60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
中文描述： 50 A, 600 V, N-CHANNEL IGBT
封裝： 21PM-BA, 21 PIN
文件頁數(shù)： 5/9頁
文件大?。?/td> 665K
代理商： FMC6G50US60
2001 Fairchild Semiconductor Corporation
FMC6G50US60 Rev. A3
F
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
1000
2000
3000
4000
5000
6000
7000
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
10
100
100
1000
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 50A
T
C
= 25
℃
━━
T
C
= 125
℃
------
Ton
Tr
S
Gate Resistance, R
G
[
]
10
100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 50A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
10
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 50A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
10
20
30
40
50
60
70
80
90
100
10
100
1000
Ton
Tr
Common Emitter
V
GE
=
±
15V, R
G
= 5.9
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
10
20
30
40
50
60
70
80
90
100
100
1000
Tf
Toff
Toff
Tf
Common Emitter
V
GE
=
±
15V, R
G
= 5.9
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
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