參數(shù)資料
型號(hào): FMC7G20US60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
中文描述: 32 A, 600 V, N-CHANNEL IGBT
封裝: 21PM-AA, 21 PIN
文件頁數(shù): 4/9頁
文件大?。?/td> 650K
代理商: FMC7G20US60
2001 Fairchild Semiconductor Corporation
FMC7G20US60 Rev. A4
F
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
10
20
30
40
50
60
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
0
10
20
30
40
50
60
Common Emitter
V
GE
= 15V
T
C
= 25
━━
T
C
= 125
------
C
C
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
0
1
2
3
4
5
20A
40A
30A
I
C
= 10A
Common Emitter
V
GE
= 15V
C
C
Case Temperature, T
C
[
]
0
4
8
12
16
20
24
28
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 32W
V
CC
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
40A
20A
I
C
= 10A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
40A
20A
I
C
= 10A
C
C
Gate - Emitter Voltage, V
GE
[V]
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FMC7G30US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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