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參數(shù)資料
| 型號： | FMC7G50US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Function Generator; Bandwidth Max:40MHz; Amplitude Accuracy :0.01dB; Frequency Max:40MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 21PM-BA, 21 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 667K |
| 代理商： | FMC7G50US60 |
2001 Fairchild Semiconductor Corporation
FMC7G50US60 Rev. A3
F
Electrical Characteristics of the IGBT
@ Inverter & Brake
T
C
= 25
°
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
Collector-Emitter Breakdown Voltage
B
VCES
/
T
J
Voltage
I
CES
Collector Cut-Off Current
I
GES
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
600
--
--
V
Temperature Coeff. of Breakdown
V
GE
= 0V, I
C
= 1mA
--
0.6
--
V/
°
C
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
--
--
--
--
250
±
100
uA
nA
On Characteristics
V
GE(th)
G-E Threshold Voltage
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 500mA, V
CE
= V
GE
I
C
= 50A
,
V
GE
= 15V
5.0
--
6.0
2.2
8.5
2.8
V
V
Dynamic Characteristics
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
3460
480
140
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9
, V
GE
= 15V
Inductive Load, T
C
= 25
°
C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
32
67
66
118
1.8
1.0
2.8
33
68
68
261
2.41
2.31
4.72
--
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
100
200
--
--
3.8
--
--
110
400
--
--
6.65
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9
, V
GE
= 15V
Inductive Load, T
C
= 125
°
C
T
sc
Short Circuit Withstand Time
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100
°
C
10
--
--
us
Q
g
Q
ge
Q
gc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CE
= 300 V, I
C
= 50A,
V
GE
= 15V
--
--
--
145
28
65
210
40
95
nC
nC
nC
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