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參數(shù)資料
| 型號： | FMG1G75US60L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Molding Type Module |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 7PM-GA, 7 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大小： | 656K |
| 代理商： | FMG1G75US60L |
2002 Fairchild Semiconductor Corporation
FMG1G75US60L Rev. A
F
0
100
200
300
400
500
600
700
0.1
1
10
100
500
Single Nonrepetitive
Pulse T
J
≤
125
℃
V
GE
= 15V
R
G
= 3.3
C
Collector-Emitter Voltage, V
CE
[V]
1
10
100
1000
1
10
100
Safe Operating Area
V
GE
= 20V, T
C
= 100
o
C
C
Collector-Emitter Voltage, V
CE
[V]
0.3
1
10
100
1000
0.1
1
10
100
500
Single Nonrepetitive
Pulse T
= 25
℃
Curves must be derated
linerarly with increase
in temperature
50us
100us
1
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
Collector-Emitter Voltage, V
CE
[V]
0
50
100
150
200
250
300
350
0
3
6
9
12
15
200 V
V
CC
= 100 V
300 V
Common Emitter
R
L
= 4
T
C
= 25
℃
G
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
Fig 17. RBSOA Characteristics
Fig 18. Transient Thermal Impedance
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
T
= 25
℃
IGBT :
DIODE :
T
℃
/
Rectangular Pulse Duration [sec]
20
40
60
80
100
120
140
100
1000
10000
Eoff
Eoff
Eon
Eon
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
R
G
= 3.3
T
C
= 25
T
C
= 125
0
C
0
C
S
Collector Current, I
C
[A]
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