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參數(shù)資料
| 型號： | FMMT493ATC |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:960W; Collector Current:150A; Collector Emitter Voltage, Vceo:1.2kV; Leaded Process Compatible:No RoHS Compliant: No |
| 中文描述： | 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 163K |
| 代理商： | FMMT493ATC |
FMMT493A
ISSUE 1 - OCTOBER 2001
2
PARAMETER
SYMBOL
MIN.
MAX.
UNIT
CONDITIONS.
Collector - Base
Breakdown Voltage
V
(BR)CBO
120
V
I
C
= 100 A
Collector - Emitter
Breakdown Voltage
V
CEO(SUS)
60
V
I
C
= 10mA*
Emitter - Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
= 100 A
Collector Cut-Off Current
I
CBO
100
nA
V
CB
= 45V
Collector Cut-Off Current
I
CES
100
nA
V
CES
= 45V
Emitter Cut-Off Current
I
EBO
100
nA
V
EB
= 4V
Collector - Emitter
Saturation Voltage
V
CE(SAT)
0.25
0.5
V
V
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base - Emitter Saturation
Voltage
V
BE(SAT)
1.15
V
I
C
=1A, I
B
= 100mA
Base Emitter Turn On
Voltage
V
BE(ON)
1.0
V
I
C
= 1A, V
CE
- 10V
Static Forward Current
Transfer Ratio
h
FE
300
500
300
100
20
1200
I
C
= 1mA, V
CE
= 10V
I
C
= 150mA, V
CE
= 10V
I
C
= 250mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 1A, V
CE
= 10V
Transition Frequency
f
T
150
Mhz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
Collector - Base
Breakdown Voltage
C
OBO
10
pF
V
CB
= 10V, f = 1MHz
ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).
*Measured under pulsed conditions. Pulse width = 300 s. Duty Cycle <2%
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