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參數(shù)資料
| 型號： | FMS7G15US60S |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | SWTCH LEVER SPDT 20A SCREW TERM |
| 中文描述： | 15 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 25PM-AA, 25 PIN |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 756K |
| 代理商： | FMS7G15US60S |
7
www.fairchildsemi.com
FMS7G15US60S Rev. B1
F
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
Figure 15. SOA Characteristics
Figure 16. RBSOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Characteristics
0
10
20
30
40
50
0
3
6
9
12
15
300 V
V
C
C
= 100 V
200 V
Common Emitter
R
L
= 20
T
C
= 25
o
C
G
a
i
G
E
G
ate C
harge, Q
g
[nC
]
5
10
15
20
25
30
100
1000
10000
Common Emitter
V
GE
= ± 15V, R
G
= 13
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
Eon
Eoff
Eoff
S
i
C
ollector C
urrent, Ic [ A
]
0.1
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
= 25
℃
Curves must be derated
linearly with increase
in temperature
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
DC Operation
1 ms
100us
50 us
C
o
u
]
C
ollector-
E
m
itter Voltage, V
C
E
[V]
0
100
200
300
400
500
600
700
0.1
1
10
50
Single Nonrepetitive
Pulse T
J
≤
125
℃
V
GE
= 15V
R
G
= 13
C
Collector-Emitter Voltage, V
CE
[V]
4
8
12
16
0.1
1
10
20
Common Cathode
di/dt = 30A/
T
C
= 25
℃
T
C
= 100
℃
---------
I
rr
T
rr
P
R
Forward Current, I
F
[A]
0
1
2
3
4
0
10
20
30
40
50
Common Cathode
V
GE
= 0V
T
C
= 25
℃
T
C
= 125
℃
F
Forward Voltage, V
F
[V]
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