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| 型號： | FOA1252A1 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 運動控制電子 |
| 英文描述： | 2.5 Gbit/s Transimpedance Amplifier |
| 中文描述： | 2.5 Gbit / s的阻放大器 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 197K |
| 代理商： | FOA1252A1 |
FOA1252A1
Electrical Characteristics
Preliminary Data Sheet
4
1998-07
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
Note: HBM according to MIL STD 883D, method 3015.7 and ESD Assn. Standard
S5.1-1993
Note: Stresses above the ones listed here may cause permanent damage to the
device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
2.2
Recommended Operating Conditions
Ambient temperature
T
amb
= -40
°
C
…
+85
°
C
Parameter
Symbol
Limit Values
min.
-0.5
-40
-40
–
500
Unit
Remarks
max.
6.0
+125
+150
85/85
–
Supply voltage
Junction temperature
Storage temperature
Relative ambient humidity
ESD integrity
V
CC
T
j
T
S
–
V
ESD
V
°
C
°
C
%/
°
C
V
–
–
–
no condensation
see note
Ambient temperature
T
amb
= -40
°
C
…
+85
°
C
Parameter
Symbol
Limit Values
min.
typ.
+4.5
+5.0
–
2.5
–
46.7
–
140
-10
–
Unit
Remarks
max.
+5.5
–
–
–
+125
Supply voltage
Data transmission rate
Supply current
Thermal resistance
Junction temperature
V
CC
–
I
CC
Θ
JA
T
j
V
Gbit/s
–
mA
K/W
°
C
–
1)
1)
Junction-to-ambient thermal resistance measurement conditions for packaged device:
PCB area: 10 cm
×
10 cm
×
1.5 mm; copper area approx. 60%; via holes to ground layer underneath the
device; all pins soldered.
–
–
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