參數(shù)資料
型號(hào)： FP31QF-F
廠商： Electronic Theatre Controls, Inc.
英文描述： 2-Watt HFET
中文描述： 2瓦異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 9/13頁(yè)
文件大?。?/td> 576K
代理商： FP31QF-F
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Specifications and information are subject to change without notice
November 2004
FP31QF
2-Watt HFET
Product Information
The Communications Edge
TM
Reference Design: 2400 – 2500 MHz
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +9 V, I
ds
= 450 mA, 25
°
C
Frequency
MHz
2400
2500
S21 – Gain
dB
12.1
S11 – Input Return Loss
dB
-13
S22 – Output Return Loss
dB
-13
Output P1dB
dBm
+33.5
Output IP3
(+18 dBm / tone, 1 MHz spacing)
Noise Figure
dB
4.6
12.0
-16
-17
dBm
+46.8
The 2.4 – 2.5 GHz Reference Circuit is shown for design purposes only. An
evaluation board is not readily available for this application. The reader can
obtain any FP31QF evaluation board and modify it with the circuit shown to
achieve the performance shown in this reference design.
2.3
2.35
2.4
2.45
2.5
2.55
2.6
Frequency (GHz)
Measured S-Parameters
-25
-20
-15
-10
-5
0
5
10
15
(
DB(|S[1,1]|)
DB(|S[2,1]|)
DB(|S[2,2]|)
Circuit Board Material: .014” FR-4 (
ε
= 4.6),
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
The main microstrip line has a line impedance of 50
.
Bill of Materials
Part style
Chip capacitor
Chip capacitor
0.018
μ
F
1000 pF
Chip capacitor
0.1
μ
F
Chip capacitor
12 nH
Wirewound chip inductor
3.3 nH
Multilayer chip inductor
5.1
Chip resistor
50
Chip resistor
FP31QF
WJ 2W HFET
Do Not Place
Ref. Desig.
C1, C4, C8, C10
C2, C3
C6, C11
C7
C12
L1, L2
L3
R1
R2
Q1
C5
Value
22 pF
1.5 pF
Size
0603
0603
0805
0603
1206
0805
0603
0603
0603
QFN 6x6
Chip capacitor
The C2 and C3 placements are at silk screen markers, “A” and “2”, respectively.
The via hole spacing along the main microstrip line is .040”.
The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
The transmission line lengths shown in the schematic are from the FP31QF
device edge to the component edge.
CAP
ID=
C=
22 pF
C1
IND
L=
12 nH
L2
CAP
ID=
C=
22 pF
CAP
C=
1.8e4 pF
C11
IC=
1e5 pF
CAP
C=
22 pF
C4
CAP
ID=
C=
1.8e4 pF
C8
ICAP
C=
22 pF
C6
ICAP
C=
1000 pF
C7
ICAP
C=
1.5 pF
C3
IND
L=
12 nH
L1
RES
R=
51 Ohm
R2
C=
DNP pF
IND
ID=
L=
3.3 nH
L3
TID=
F0=
Loss=
Eeff=
L=
Z0=
0 MHz
0
3.46
50 Ohm
IRES
R=
5.1 Ohm
R1
ICAP
C=
1.5 pF
C2
TID=
Eeff=
L=
Z0=
0 MHz
0
3.46
150 mil
TL1
1
2
SID=
NET=
"FP31QF"
P1
P=
50 Ohm
Z=
P2
P=
50 Ohm
Z=
-Vgg
Vds=9V @ 450 mA
C2
C3
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