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參數(shù)資料
| 型號： | FP31QF-PCB900 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 2-Watt HFET |
| 中文描述： | 2瓦異質(zhì)結(jié)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 576K |
| 代理商： | FP31QF-PCB900 |
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Specifications and information are subject to change without notice
November 2004
FP31QF
2-Watt HFET
Product Information
The Communications Edge
TM
Application Circuit: 870 – 960 MHz (FP31QF-PCB900)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +9 V, I
ds
= 450 mA, 25
°
C
Frequency
MHz
S21 – Gain
dB
S11 – Input Return Loss
dB
S22 – Output Return Loss
dB
Output P1dB
dBm
Output IP3
(+18 dBm / tone, 1 MHz spacing)
Noise Figure
dB
IS-95 Channel Power
@ -45 dBc ACPR
870
18.3
-15
-9.3
+33.9
915
18
-20
-12
+34
960
17.7
-16
-16
+33.7
dBm
+46
3.4
3.5
3.5
dBm
+27.8
Circuit Board Material: .014” FR-4 (
ε
r
= 4.6),
4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper
The main microstrip line has a line impedance of 50
.
Bill of Materials
Part style
Chip capacitor
Chip capacitor
0.018
μ
F
1000 pF
Chip capacitor
0.1
μ
F
Chip capacitor
27 nH
Wirewound chip inductor
3.3 nH
Multilayer chip inductor
10
Chip resistor
51
Chip resistor
FP31QF
WJ 2W HFET
Do Not Place
Ref. Desig.
C1, C4, C8, C10
C2, C3
C6, C11
C7
C12
L1, L2
L3
R1
R2
Q1
C5
Value
100 pF
4.7 pF
Size
0603
0603
0805
0603
1206
0805
0603
0603
0603
QFN 6x6
Chip capacitor
The C2 and C3 placements are at silk screen markers, “H” and “9.5”, respectively.
The via hole spacing along the main microstrip line is .040”.
The distance from the edge of the FP31QF to the closer edge of L3 is .305”.
The transmission line lengths shown in the schematic are from the FP31QF
device edge to the component edge.
IRES
R=
10 Ohm
R1
ICAP
C=
100 pF
C1
IIND
L=
27 nH
L2
ICAP
C=
100 pF
C10
CAP
C=
1.8e4 pF
C11
C=
1e5 pF
CAP
C=
100 pF
C4
ICAP
C=
1.8e4 pF
C8
ICAP
C=
100 pF
C6
ICAP
C=
1000 pF
C7
ICAP
C=
4.7 pF
C3
IIND
L=
27 nH
L1
IRES
R=
51 Ohm
R2
ICAP
C=
DNP pF
C5
IIND
L=
3.3 nH
L3
TID=
F0=
Loss=
Eeff=
L=
Z0=
0 MHz
0
3.46
520 mil
50 Ohm
ICAP
C=
4.7 pF
C2
TID=
F0=
Loss=
Eeff=
ZL=
0 MHz
0
3.46
500 mil
TL1
1
2
SID=
NET=
"FP31QF"
Q1
P1
P=
50 Ohm
Z=
P2
P=
50 Ohm
Z=
-Vgg
Vds=9V @ 450 mA
C2
C3
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