參數(shù)資料
型號: FP412L100
廠商: SIEMENS A G
元件分類: 模擬信號調(diào)理
英文描述: Differential Magneto Resistor
中文描述: SPECIALTY ANALOG CIRCUIT, SSS3
文件頁數(shù): 2/3頁
文件大小: 201K
代理商: FP412L100
Semiconductor Group
2
FP 412 D 250
The differential magneto resistor FP 412 D 250 is a magnetically variable resistor in D-
type InSb/NiSb semiconductor material. The MR is glued onto a ferrite substrate and is
supplied in a "MICROPACK" copper/polyimide film package. The basic resistance of
each of the magneto resistors is 250
. The series coupled MRs are actuated by an
external magnetic field or can be biased by a permanent magnet and actuated by a soft
iron target.
Maximum ratings
Characteristics (
T
A
= 25
°
C)
Parameter
Operating temperature
Storage temperature
Power dissipation
1)
Supply voltage
2)
(
B
= 0.2 T)
Thermal conductivity
–attached to heatsink
–in still air
Symbol
T
A
T
stg
P
tot
V
IN
Value
– 40 / +175
– 40 / +185
1000
12
Unit
°
C
°
C
mW
V
G
th case
G
th A
25
1
mW/K
mW/K
Basic resistance
(
I
1 mA,
B
= 0 T)
Center symmetry
3)
R
01-3
370
630
M
R
B
/
R
0
10
%
Relative resistance change
(
R
0
=
R
01-3
,
R
04-6
at
B
= 0 T)
B
=
±
0.3 T
4)
B
=
±
1 T
Temperature coefficient
B
= 0 T
B
=
±
0.3 T
B
=
±
1 T
> 2.8
> 12
TC
R
– 1.8
– 2.7
– 2.9
%/K
%/K
%/K
1) Corresponding to diagram
P
tot
=
f
(
T
case
)
2) Corresponding to diagram
V
IN
=
f(T
case
)
3)
4) 1 T = 1 Tesla = 10
4
Gauss
M
R
--------------------------------
R
01
R
3
=
×
100% for
R
01-2
>
R
02-3
2
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