參數(shù)資料
型號(hào): FQB32N20C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 200V N-Channel MOSFET
中文描述: 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, D2PAK-3
文件頁數(shù): 3/9頁
文件大?。?/td> 911K
代理商: FQB32N20C
Rev. A, March 2004
2004 Fairchild Semiconductor Corporation
F
10
-1
10
0
10
1
0
1000
2000
3000
4000
5000
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
20
40
60
80
100
0
2
4
6
8
10
12
V
DS
= 100V
V
DS
= 40V
V
DS
= 160V
Note : I
D
= 32.0A
V
G
,
Q
G
, Total Gate Charge [nC]
0.0
0.4
0.8
1.2
1.6
2.0
10
-1
10
0
10
1
10
2
150
Notes :
1. V
GS
= 0V
2. 250μs Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
0
20
40
60
80
100
0.0
0.1
0.2
0.3
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
D
I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
10
2
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250μs Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
0
10
1
10
2
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250μs Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Typical Characteristics
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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