參數(shù)資料
型號(hào): FQB4P40
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 400V P-Channel MOSFET
中文描述: 3.5 A, 400 V, 3.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263
封裝: D2PAK-3
文件頁數(shù): 4/9頁
文件大?。?/td> 642K
代理商: FQB4P40
2000 Fairchild Semiconductor International
F
Rev. A, August 2000
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N ote s :
1. Z
θ
J C
(t) = 1.47
/W M ax.
2. D u ty F actor, D =t
1
/t
2
3. T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
sing le pu lse
D = 0.5
0 .02
0 .01
0 .2
0 .05
0 .1
Z
θ
(
t
1
, S q u a re W a ve P u ls e D u ra tio n [s e c ]
25
50
75
100
125
150
0
1
2
3
4
-
D
,
T
C
, Case Temperature [
]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
-
D
,
-V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
= -10 V
2. I
D
= -1.75 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= -250
μ
A
-
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
相關(guān)PDF資料
PDF描述
FQI4P40 400V P-Channel MOSFET
FQB50N06L 60V LOGIC N-Channel MOSFET(漏源電壓為60V的邏輯N溝道增強(qiáng)型MOSFET)
FQB50N06 30V N-Channel PowerTrench MOSFET
FQB55N06 30V N-Channel PowerTrench MOSFET
FQI55N06 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQB4P40TM 功能描述:MOSFET 400V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB50N06 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:50 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:60V, On Resistance Rds(on):22mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissipation Pd:120W , RoHS Compliant: Yes
FQB50N06L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V LOGIC N-Channel MOSFET
FQB50N06LTM 功能描述:MOSFET 60V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB50N06TM 功能描述:MOSFET 60V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube