參數(shù)資料
型號: FQB55N06
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 55 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
封裝: D2PAK-3
文件頁數(shù): 4/9頁
文件大?。?/td> 604K
代理商: FQB55N06
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o t e s :
1 . Z
2 . D u t y F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
(t ) = 1 .1 3
/W M a x.
J C
(t )
s in g le p u ls e
D = 0 .5
0 .0 2
0 .0 1
0 .2
0 .0 5
0 .1
Z
J
(
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
25
50
75
100
125
150
175
0
10
20
30
40
50
60
I
D
,
T
C
, Case Temperature [
]
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
= 175
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
Notes :
1. V
= 10 V
2. I
D
= 27.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
= 0 V
2. I
D
= 250 A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
相關PDF資料
PDF描述
FQI55N06 30V N-Channel PowerTrench MOSFET
FQB58N08 80V N-Channel MOSFET(漏源電壓為80V的N溝道增強型MOSFET)
FQI58N08 80V N-Channel MOSFET(漏源電壓為80V的N溝道增強型MOSFET)
FQB5N15 150V N-Channel MOSFET(漏源電壓為150V的N溝道增強型MOSFET)
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