參數(shù)資料
型號(hào)： FQB5N90
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 900V N-Channel MOSFET
中文描述： 5.4 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, D2PAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 682K
代理商： FQB5N90
2000 Fairchild Semiconductor International
September 2000
Rev. A, September 2000
F
QFET
TM
FQB5N90 / FQI5N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
5.4A, 900V, R
DS(on)
= 2.3
@ V
GS
= 10 V
Low gate charge ( typical 31 nC)
Low Crss ( typical 13 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB5N90 / FQI5N90
900
5.4
3.42
21.6
±
30
660
5.4
15.8
4.0
3.13
158
1.27
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
0.79
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
! "
!
!
S
!
"
"
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQI5N90 900V N-Channel MOSFET
FQB5P10 100V P-Channel MOSFET
FQI5P10 100V P-Channel MOSFET
FQB5P20 200V P-Channel MOSFET(漏源電壓為-200V的P溝道增強(qiáng)型MOSFET)
FQI5P20 200V P-Channel MOSFET(漏源電壓為-200V的P溝道增強(qiáng)型MOSFET)
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FQB5P10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V P-Channel MOSFET
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