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參數(shù)資料
| 型號： | FQB6N45 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 450V N-Channel MOSFET |
| 中文描述： | 6.2 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 582K |
| 代理商： | FQB6N45 |
2000 Fairchild Semiconductor International
Rev. A1, January 2001
F
0
4
8
12
16
20
0
2
4
6
8
10
12
V
DS
= 225V
V
DS
= 360V
V
DS
= 90V
※
Note : I
D
= 6.2A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
V
SD
, Source-Drain Voltage [V]
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
25
℃
150
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
0
2
4
6
I
D
, Drain Current [A]
8
10
12
14
16
18
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
※
Note : T
J
= 25
℃
V
GS
= 20V
V
GS
= 10V
R
D
]
D
2
4
6
8
10
10
-1
10
0
10
1
※
Notes :
1. V
DS
= 50V
2. 250
μ
s Pulse Test
-55
℃
150
℃
25
℃
I
D
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
GS
V
10 V
7.0 V
6.5 V
6.0 V
I
D
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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