參數(shù)資料
型號(hào)： FQB9P25
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 250V P-Channel MOSFET
中文描述： 9.4 A, 250 V, 0.62 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, D2PAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 573K
代理商： FQB9P25
2000 Fairchild Semiconductor International
December 2000
Rev. A2, December 2000
F
QFET
TM
FQB9P25 / FQI9P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize
on-state
resistance,
provide
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for high efficiency switching DC/DC converters.
superior
switching
Features
-9.4A, -250V, R
DS(on)
= 0.62
@V
GS
= -10 V
Low gate charge ( typical 29 nC)
Low Crss ( typical 27 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB9P25 / FQI9P25
-250
-9.4
-5.9
-37.6
±
30
650
-9.4
12
-5.5
3.13
120
0.96
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
”
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
1.04
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
●
●
●
●
▲
!
!
D
!
!
!
●
●
S
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQB9P25TM 功能描述:MOSFET 250V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQBAT1 制造商:OMRON AUTOMATION AND SAFETY 功能描述:BATTERY
FQ-BAT1 制造商:Omron Electronic Components LLC 功能描述:BATTERY 制造商:OMRON AUTOMATION AND SAFETY 功能描述:BATTERY 制造商:Omron Electronic Components LLC 功能描述:Battery 制造商:OMRON INDUSTRIAL AUTOMATION 功能描述:Battery
F-QB-F1 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series
F-QB-F2 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series
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