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參數(shù)資料
| 型號： | FQD1N60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 600V N-Channel MOSFET |
| 中文描述： | 1 A, 600 V, 11.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 543K |
| 代理商： | FQD1N60 |
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
0.2
0.4
0.6
V
SD
, Source-Drain Voltage [V]
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
25
150
Notes :
1. V
= 0V
2. 250 s Pulse Test
I
D
2
4
6
8
10
10
-1
10
0
Notes :
1. V
= 50V
2. 250 s Pulse Test
-55
150
25
I
D
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
GS
V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250 s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
0
1
2
3
4
5
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 480V
V
DS
= 120V
Note : I
D
= 1.2 A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
50
100
150
200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0.0
0.5
1.0
1.5
2.0
2.5
0
5
10
15
20
25
30
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
]
D
I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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| FQD1N80 | 800V N-Channel MOSFET |
| FQU1N80 | 800V N-Channel MOSFET |
| FQD1P50 | 500V P-Channel MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQD1N60 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FQD1N60C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FQD1N60C_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET |
| FQD1N60CTF | 功能描述:MOSFET 600V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQD1N60CTM | 功能描述:MOSFET N-CH/600V/1A/ QFET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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