參數(shù)資料
型號： FQD2P25
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 250V P-Channel MOSFET(漏源電壓為250V的P溝道增強型MOS場效應(yīng)管)
中文描述： 2 A, 250 V, 4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： DPAK-3
文件頁數(shù)： 1/9頁
文件大?。?/td> 535K
代理商： FQD2P25
2000 Fairchild Semiconductor International
April 2000
Rev. A, April 2000
F
QFET
TM
FQD2P25 / FQU2P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
Features
-2.0A, -250V, R
DS(on)
= 4.0
@V
GS
= -10 V
Low gate charge ( typical 6.5 nC)
Low Crss ( typical 6.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQD2P25 / FQU2P25
-250
-2.0
-1.27
-8.0
±
30
120
-2.0
3.7
-5.5
2.5
37
0.29
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Parameter
Typ
--
--
--
Max
3.4
50
110
Units
°C W
°C W
°C W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
I-PAK
FQU Series
D-PAK
FQD Series
G
S
D
G
S
D
!
D
!
!
!
!
S
G
相關(guān)PDF資料
PDF描述
FQU2P40 400V P-Channel MOSFET
FQD2P40 400V P-Channel MOSFET(漏源電壓為400V的P溝道增強型MOS場效應(yīng)管)
FQU45N03L 30V Logic N-Channel MOSFET(漏源電壓為30V、漏電流 為30A的邏輯N溝道增強型MOS場效應(yīng)管)
FQU4N20L 200V LOGIC N-Channel MOSFET
FQU4N20 200V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQD2P25TF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD2P25TM 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQD2P40 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V P-Channel MOSFET
FQD2P40_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V P-Channel MOSFET
FQD2P40TF 功能描述:MOSFET 400V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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