- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375885 > FQI32N12V2 (FAIRCHILD SEMICONDUCTOR CORP) 120V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號： | FQI32N12V2 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 120V N-Channel MOSFET |
| 中文描述： | 32 A, 120 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | I2PAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 649K |
| 代理商： | FQI32N12V2 |
Rev. A, December 2003
F
2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
※
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
℃
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
10
2
175
o
C
25
o
C
-55
o
C
※
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
0
20
40
60
80
100
120
0
20
40
60
80
100
120
140
160
V
GS
= 20V
V
GS
= 10V
※
Note : T
J
= 25
℃
R
D
Ω
D
I
D
, Drain Current [A]
0.2
0.4
0.6
V
SD
, Source-Drain voltage [V]
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
10
2
175
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
℃
I
D
,
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
3500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes ;
1. V
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
0
2
4
6
8
10
12
V
DS
= 60V
V
DS
= 30V
V
DS
= 96V
※
Note : I
D
= 32A
V
G
,
Q
G
, Total Gate Charge [nC]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FQB32N12V2 | 120V N-Channel MOSFET |
| FQI32N20C | 200V N-Channel MOSFET |
| FQB32N20C | 200V N-Channel MOSFET |
| FQI4N20L | 200V LOGIC N-Channel MOSFET |
| FQI4P25 | 250V P-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQI32N12V2TU | 功能描述:MOSFET 120V N-Ch Adv QFET V2 series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI32N20C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQI32N20CTU | 功能描述:MOSFET 200V N-Channel Adv Q-FET C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQI33N10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-262AA |
| FQI33N10L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。