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參數(shù)資料
| 型號： | FQI33N10 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 33A I(D) | TO-262AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直|第33A條（丁）|對262AA |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 585K |
| 代理商： | FQI33N10 |
2000 Fairchild Semiconductor International
F
Rev. A, April 2000
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o t e s :
1 . Z
2 . D u t y F a c t o r , D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
(t ) = 1 .1 8
/W M a x.
J C
(t )
s in g le p u ls e
D = 0 .5
0 .0 2
0 .0 1
0 .2
0 .0 5
0 .1
Z
J
(
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
I
D
,
T
C
, Case Temperature [
]
10
0
10
1
10
2
10
0
10
1
10
2
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
= 175
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
= 10 V
2. I
D
= 16.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
= 0 V
2. I
D
= 250 A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
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| FQI33N10L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
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| FQI34N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| FQI34N20L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V LOGIC N-Channel MOSFET |
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