參數(shù)資料
型號(hào)： FQI3P50
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 500V P-Channel MOSFET(漏源電壓為-500V的P溝道增強(qiáng)型MOSFET)
中文描述： 2.7 A, 500 V, 4.9 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262
封裝： I2PAK-3
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 645K
代理商： FQI3P50
2000 Fairchild Semiconductor International
August 2000
Rev. A, August 2000
F
QFET
TM
FQB3P50 / FQI3P50
500V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for electronic lamp ballast based on complimentary
half bridge.
Features
-2.7A, -500V, R
DS(on)
= 4.9
@V
GS
= -10 V
Low gate charge ( typical 18 nC)
Low Crss ( typical 9.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB3P50 / FQI3P50
-500
-2.7
-1.71
-10.8
±
30
250
-2.7
8.5
-4.5
3.13
85
0.68
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.47
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
●
●
●
●
▲
!
!
D
!
!
!
●
●
S
G
相關(guān)PDF資料
PDF描述
FQB44N08 80V N-Channel MOSFET(漏源電壓為80V的N溝道增強(qiáng)型MOSFET)
FQI44N08 80V N-Channel MOSFET
FQI44N10 100V N-Channel MOSFET
FQB44N10 100V N-Channel MOSFET
FQB45N03L 30V LOGIC N-Channel MOSFET(漏源電壓為30V的邏輯N溝道增強(qiáng)型MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQI3P50TU 功能描述:MOSFET 500V P-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI44N08 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:80V N-Channel MOSFET
FQI44N08TU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQI44N10 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:100V N-Channel MOSFET
FQI44N10TU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*