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參數(shù)資料
| 型號(hào)： | FQI60N03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V LOGIC N-Channel MOSFET(漏源電壓為30V的邏輯N溝道增強(qiáng)型MOSFET) |
| 中文描述： | 60 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | I2PAK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 592K |
| 代理商： | FQI60N03L |
2000 Fairchild Semiconductor International
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Rev. A, April 2000
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 60
μ
H, I
= 60A, V
= 15V, R
G
= 25
,
Starting T
J
= 25°C
3. I
60A, di/dt
300A/
μ
s, V
DD
4. Pulse Test : Pulse width
300
μ
s, Duty cycle
5. Essentially independent of operating temperature
BV
Starting T
J
= 25°C
2%
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to
25°C
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 24 V, T
C
= 150°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
30
--
--
V
Breakdown Voltage Temperature
--
0.02
--
V/°C
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 10 V, I
D
= 30 A
V
GS
= 5 V, I
D
=30 A
V
DS
= 15 V, I
D
= 30 A
1.0
--
--
--
--
2.5
V
0.011
0.015
33
0.0135
0.019
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
875
570
155
1140
740
200
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 15 V, I
D
= 30 A,
R
G
= 25
--
--
--
--
--
--
--
17
155
10
75
18.5
7
9.5
45
320
30
160
24
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 24 V, I
D
= 60 A,
V
GS
= 5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
40
35
60
240
1.5
--
--
A
A
V
ns
nC
V
GS
= 0 V, I
S
= 60 A
V
GS
= 0 V, I
S
= 60 A,
dI
F
/ dt = 100 A/
μ
s
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| FQI60N03LTU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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