參數(shù)資料
型號： FQN1N60C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： 600V N-Channel MOSFET
中文描述： 300 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： TO-92, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 677K
代理商： FQN1N60C
2005 Fairchild Semiconductor Corporation
FQN1N60C Rev. A
1
www.fairchildsemi.com
F
QFET
FQN1N60C
600V N-Channel MOSFET
Features
0.3 A, 600 V, R
DS(on)
= 11.5
@ V
GS
= 10 V
Low gate charge ( typical 4.8 nC )
Low Crss ( typical 3.5 pF)
Fast switching
100 % avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
Absolute Maximum Ratings
Thermal Characteristics
●
●
●
●
●
▲
▲
!
!
S
!
!
D
G
TO-92
SSN Series
S
D
G
Symbol
Parameter
FQN1N60C
Units
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
0.3
A
0.18
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
1.2
A
Gate-Source Voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
33
mJ
Avalanche Current
(Note 1)
0.3
A
Repetitive Avalanche Energy
(Note 1)
0.3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation (T
A
= 25°C)
Power Dissipation (T
L
= 25°C)
1
W
3
W
- Derate above 25°C
0.02
W/°C
T
J
, T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°C
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
°C
Symbol
Parameter
Typ
Max
Units
R
θ
JL
R
θ
JA
Thermal Resistance, Junction-to-Lead
(Note 6a)
--
50
°C
/
W
Thermal Resistance, Junction-to-Ambient
(Note 6b)
--
140
°C
/
W
相關(guān)PDF資料
PDF描述
FQNL1N50B 500V N-Channel MOSFET
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FQP10N20C 200V N-Channel MOSFET
FQPF10N20C 200V N-Channel MOSFET
FQP10N20 200V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQN1N60CBU 功能描述:MOSFET 600V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQN1N60CTA 功能描述:MOSFET 600V NCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQN1N60CTAG 制造商:Fairchild Semiconductor Corporation 功能描述:
FQNL1N50B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
FQNL1N50BBU 功能描述:MOSFET 500V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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