參數(shù)資料
型號： FQP10N60C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 600V N-Channel MOSFET
中文描述： 9.5 A, 600 V, 0.73 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 1/10頁
文件大小： 835K
代理商： FQP10N60C
2003 Fairchild Semiconductor Corporation
Rev. B, October 2003
F
QF E T
TM
FQP10N60C/FQPF10N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Features
9.5A, 600V, R
DS(on)
= 0.73
@V
GS
= 10 V
Low gate charge ( typical 44 nC)
Low Crss ( typical 18 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQP10N60C
FQPF10N60C
600
9.5 *
3.3 *
38 *
±
30
700
9.5
15.6
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
9.5
3.3
38
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
156
1.25
50
0.4
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
FQP10N60C
0.8
0.5
62.5
FQPF10N60C
2.5
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
G
S
D
TO-220F
FQPF Series
G
S
D
●
●
●
●
●
●
▲
!
!
!
S
!
!
!
!
D
G
相關(guān)PDF資料
PDF描述
FQPF10N60C 600V N-Channel MOSFET
FQP11N40C 400V N-Channel MOSFET
FQPF11N40C 400V N-Channel MOSFET
FQP11N40 400V N-Channel MOSFET
FQP11P06 60V P-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQP10N60C_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FQP10N60C_Q 功能描述:MOSFET 600V N-Ch Q-FET advance C-Series RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP10N60CF 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FQP11N40 功能描述:MOSFET 400V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP11N40C 功能描述:MOSFET 400V N-Channel Advance Q-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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