參數(shù)資料
型號： FQP13N50CF
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 13 A, 500 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 1/10頁
文件大小： 1157K
代理商： FQP13N50CF
2006 Fairchild Semiconductor Corporation
FQP13N50CF / FQPF13N50CF Rev. A1
1
www.fairchildsemi.com
F
May 2006
FRFET
TM
F
QP13N50CF / FQPF13N50CF
500V N-Channel MOSFET
Features
13A, 500V, R
DS(on)
= 0.54
@V
GS
= 10 V
Low gate charge (typical 43 nC)
Low Crss (typical 20pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Fast recovery body diode (typical 100ns)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
TO-220
FDP Series
G
S
D
D
G
S
TO-220F
FQPF Series
G
S
D
Symbol
Parameter
FQP13N50CF
FQPF13N50CF
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
13
13*
A
8
8*
A
I
DM
Drain Current
- Pulsed
(Note 1)
52
52*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
530
mJ
Avalanche Current
(Note 1)
13
A
Repetitive Avalanche Energy
(Note 1)
19.5
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
195
48
W
- Derate above 25
°
C
1.56
0.39
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FQP13N50CF
FQPF13N50CF
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
0.64
2.58
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQP13N60L 制造商:Fairchild Semiconductor Corporation 功能描述:
FQP13N60TF 制造商:Fairchild Semiconductor Corporation 功能描述:
FQP140N03L 功能描述:MOSFET TO-220 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP14N15 功能描述:MOSFET N-CH/150V/14.4A/0.21OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQP14N30 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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