參數(shù)資料
型號(hào): FQPF16N25C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: 250V N-Channel MOSFET
中文描述: 15.6 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220F, 3 PIN
文件頁(yè)數(shù): 7/10頁(yè)
文件大?。?/td> 1138K
代理商: FQPF16N25C
Rev. A, March 2004
F
2004 Fairchild Semiconductor Corporation
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
as DUT
V
GS
I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Forward Voltage Drop
V
SD
I
FM
, Body Diode Forward Current
Body Diode Reverse Current
I
RM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Period
-Gate Pulse Width
-Gate Pulse Width
Same Type
dv/dt controlled by R
G
Body Diode
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQPF17N08 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF17N08L 功能描述:MOSFET 80V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF17N40 功能描述:MOSFET 400V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF17N40T 功能描述:MOSFET 400V N-Ch QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQPF17N4O 制造商:Fairchild Semiconductor Corporation 功能描述: