參數(shù)資料
型號: FQU5N60C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 600V N-Channel MOSFET
中文描述: 2.8 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: IPAK-3
文件頁數(shù): 3/9頁
文件大?。?/td> 615K
代理商: FQU5N60C
Rev. A, October 2003
2003 Fairchild Semiconductor Corporation
F
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
25
I
D
,
V
SD
, Source-Drain voltage [V]
0
4
8
12
16
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
Note : I
D
= 4.5A
V
G
,
Q
G
, Total Gate Charge [nC]
0
2
4
6
8
10
0
1
2
3
4
5
6
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
D
Ω
D
I
D
, Drain Current [A]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
10
-1
10
0
10
1
0
200
400
600
800
1000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
10
-1
10
0
10
1
10
-2
10
-1
10
0
10
1
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
I
D
,
V
DS
, Drain-Source Voltage [V]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250
μ
s Pulse Test
I
D
,
V
GS
, Gate-Source Voltage [V]
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