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參數(shù)資料
| 型號(hào)： | FRE264D |
| 廠(chǎng)商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| 中文描述： | 23 A, 250 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | FRE264D |
4-1
FRE264D, FRE264R,
FRE264H
23A, 250V, 0.130 Ohm, Rad Hard,
N-Channel Power MOSFETs
File Number
3260.2
Package
TO-258AA
Symbol
Features
23A, 250V, RDS(on) = 0.130
Second Generation Rad Hard MOSFET Results From New Design Concepts
Gamma
- Meets Pre-Rad Specifications to 100KRAD(Si)
- Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
- Performance Permits Limited Use to 3000KRAD(Si)
- Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
- Survives 2E12 Typically If Current Limited to IDM
- 22.0nA Per-RAD(Si)/sec Typically
- Pre-RAD Specifications for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Gamma Dot
Photo Current
Neutron
Description
The Intersil has designed a series of SECOND GENERATION hardened power
MOSFETs of both N and P channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m
. Total dose hardness is
offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness ranging from
1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose rate hardness
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-
rent limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown
above. Reliability screening is available as either non TX (commercial), TX equiv-
alent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any
desired deviations from the data sheet.
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRE264D, R, H
250
250
UNITS
V
V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20k
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
23
15
69
±
20
A
A
A
V
150
60
1.20
69
23
69
W
W
W/
o
C
A
A
A
o
C
-55 to +150
300
o
C
June 1998
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRE264H | 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE264R | 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE460D | 12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE460H | 12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE460R | 12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRE264H | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE264R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE400 | 制造商:Electrolube 功能描述:FREEZER, 400ML |
| FRE460D | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs |
| FRE460H | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs |
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