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參數(shù)資料
| 型號： | FRE9160D |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| 封裝： | HERMETIC SEALED, METAL, TO-258AA, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 49K |
| 代理商： | FRE9160D |
2
Pre-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source Breakdown Volts
BVDSS
VGS = 0, ID = 1mA
-100
-
V
Gate-Threshold Volts
VGS(th)
VDS = VGS, ID = 1mA
-2.0
-4.0
V
Gate-Body Leakage Forward
IGSSF
VGS = -20V
-
100
nA
Gate-Body Leakage Reverse
IGSSR
VGS = +20V
-
100
nA
Zero-Gate Voltage
Drain Current
IDSS1
IDSS2
IDSS3
VDS = -100V, VGS = 0
VDS = -80V, VGS = 0
VDS = -80V, VGS = 0, TC = +125
o
C
-
-
-
1
0.025
0.25
mA
Rated Avalanche Current
IAR
Time = 20
μ
s
-
90
A
Drain-Source On-State Volts
VDS(on)
VGS = -10V, ID = 30A
-
-2.99
V
Drain-Source On Resistance
RDS(on)
VGS = -10V, ID = 19A
-
0.095
Turn-On Delay Time
td(on)
VDD = -50V, ID = 30A
-
90
ns
Rise Time
tr
Pulse Width = 3
μ
s
-
440
Turn-Off Delay Time
td(off)
Period = 300
μ
s, Rg = 10
-
250
Fall Time
tf
0
≤
VGS
≤
10 (See Test Circuit)
-
170
Gate-Charge Threshold
QG(th)
VDD = -50V, ID = 30A
IGS1 = IGS2
0
≤
VGS
≤
20
4
18
nc
Gate-Charge On State
QG(on)
85
350
Gate-Charge Total
QGM
180
750
Plateau Voltage
VGP
-3
-14
V
Gate-Charge Source
QGS
21
85
nc
Gate-Charge Drain
QGD
35
140
Diode Forward Voltage
VSD
ID = 30A, VGD = 0
-0.6
-1.8
V
Reverse Recovery Time
TT
I = 30A; di/dt = 100A/
μ
s
-
400
ns
Junction-To-Case
R
θ
jc
-
0.83
o
C/W
Junction-To-Ambient
R
θ
ja
Free Air Operation
-
48
FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT
V
DD
R
L
V
DS
DUT
R
GS
0V
V
GS
= -12V
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
FRE9160D, FRE9160R, FRE9160H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRE9160H | 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9160R | 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260D | 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260H | 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260R | HDWR FRAME SNAP-IN .062 BLACK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRE9160H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9160R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260H | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRE9260R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs |
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