參數(shù)資料
型號： FRE9160H
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs
中文描述： 0.095 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA
封裝： HERMETIC SEALED, METAL, TO-258AA, 3 PIN
文件頁數(shù)： 3/6頁
文件大?。?/td> 49K
代理商： FRE9160H
3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRE9160D, R
VGS = 0, ID = 1mA
-100
-
V
(Note 5, 6)
BVDSS
FRE9160H
VGS = 0, ID = 1mA
-95
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRE9160D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Note 3, 5, 6)
VGS(th)
FRE9160H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRE9160D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRE9160H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRE9160D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRE9160H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRE9160D, R
VGS = 0, VDS = -80V
-
25
μ
A
(Note 5, 6)
IDSS
FRE9160H
VGS = 0, VDS = -80V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRE9160D, R
VGS = -10V, ID = 30A
-
-2.99
V
(Note 1, 5, 6)
VDS(on)
FRE9160H
VGS = -16V, ID = 30A
-
-4.49
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRE9160D, R
VGS = -10V, ID = 19A
-
0.095
(Note 1, 5, 6)
RDS(on)
FRE9160H
VGS = -14V, ID = 19A
-
0.143
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 6/8/90 on TA17761 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA
19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, Intersil Application Note AN8831, Oct. 1988
FRE9160D, FRE9160R, FRE9160H
相關(guān)PDF資料
PDF描述
FRE9160R 30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9260D 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FRE9160R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:30A, -100V, 0.095 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9260D 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9260H 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
FRE9260R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs
FREC12X4BL 功能描述:電線導(dǎo)管 Fitting, End Cap, 12" x 4" (300mm x 100m RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
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