參數(shù)資料
型號(hào)： FRM9250H
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs
中文描述： 16 A, 200 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
文件頁數(shù)： 3/6頁
文件大小： 50K
代理商： FRM9250H
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRM9250D, R
VGS = 0, ID = 1mA
-200
-
V
(Note 5, 6)
BVDSS
FRM9250H
VGS = 0, ID = 1mA
-190
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRM9250D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Note 3, 5, 6)
VGS(th)
FRM9250H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRM9250D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRM9250H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRM9250D, R
VGS = +20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRM9250H
VGS = +20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRM9250D, R
VGS = 0, VDS =-160V
-
25
μ
A
(Note 5, 6)
IDSS
FRM9250H
VGS = 0, VDS = -160V
-
100
μ
A
Drain-Source
On-state Volts
(Note 1, 4, 6)
VDS(on)
FRM9250D, R
VGS = -10V, ID = 16A
-
-5.04
V
(Note 1, 5, 6)
VDS(on)
FRM9250H
VGS = -16V, ID = 16A
-
-7.56
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRM9250D, R
VGS = -10V, ID = 10A
-
0.300
(Note 1, 5, 6)
RDS(on)
FRM9250H
VGS = -14V, ID = 10A
-
0.450
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 1E13
5. Gamma = 1000KRAD(Si). Neutron = 1E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 7/21/90 on TA17752 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRM9250D, FRM9250R, FRM9250H
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FRM9250R 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:16A, -200V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs
FRME1 功能描述:電線導(dǎo)管 Rack Mount Enclosure 1 RU RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
FRME144SBL 功能描述:電線導(dǎo)管 Rack Mount Fiber Splice Enclosure RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
FRME1U 功能描述:電線導(dǎo)管 Rack Mount Enclosure 1 RU RoHS:否 制造商:Panduit 類型:Slotted SideWall Open finger design wiring cut 材料:Polypropylene 顏色:Light Gray 大小: 最大光束直徑: 抗拉強(qiáng)度: 外部導(dǎo)管寬度:25 mm 外部導(dǎo)管高度:25 mm
FRME1Y 制造商:Panduit Corp 功能描述:PANDUIT
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