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參數(shù)資料
| 型號(hào)： | FRS9130H |
| 廠(chǎng)商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs |
| 中文描述： | 0.565 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA |
| 封裝： | HERMETIC SEALED, METAL, TO-257AA, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | FRS9130H |
4-3
Post-Radiation Electrical Specifications
TC = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TYPE
TEST CONDITIONS
LIMITS
UNITS
MIN
MAX
Drain-Source
Breakdown Volts
(Note 4, 6)
BVDSS
FRS9130D, R
VGS = 0, ID = 1mA
-100
-
V
(Note 5, 6)
BVDSS
FRS9130H
VGS = 0, ID = 1mA
-95
-
V
Gate-Source
Threshold Volts
(Note 4, 6)
VGS(th)
FRS9130D, R
VGS = VDS, ID = 1mA
-2.0
-4.0
V
(Note 3, 5, 6)
VGS(th)
FRS9130H
VGS = VDS, ID = 1mA
-2.0
-6.0
V
Gate-Body
Leakage Forward
(Note 4, 6)
IGSSF
FRS9130D, R
VGS = -20V, VDS = 0
-
100
nA
(Note 5, 6)
IGSSF
FRS9130H
VGS = -20V, VDS = 0
-
200
nA
Gate-Body
Leakage Reverse
(Note 2, 4, 6)
IGSSR
FRS9130D, R
VGS = 20V, VDS = 0
-
100
nA
(Note 2, 5, 6)
IGSSR
FRS9130H
VGS = 20V, VDS = 0
-
200
nA
Zero-Gate Voltage
Drain Current
(Note 4, 6)
IDSS
FRS9130D, R
VGS = 0, VDS = -80V
-
25
μ
A
(Note 5, 6)
IDSS
FRS9130H
VGS = 0, VDS = -80V
-
100
μ
A
Drain-Source
On-State Volts
(Note 1, 4, 6)
VDS(on)
FRS9130D, R
VGS = -10V, ID = 6A
-
-3.56
V
(Note 1, 5, 6)
VDS(on)
FRS9130H
VGS = -16V, ID = 6A
-
-5.34
V
Drain-Source
On Resistance
(Note 1, 4, 6)
RDS(on)
FRS9130D, R
VGS = -10V, ID = 4A
-
0.565
(Note 1, 5, 6)
RDS(on)
FRS9130H
VGS = -14V, ID = 4A
-
0.848
NOTES:
1. Pulse test, 300
μ
s max
2. Absolute value
3. Gamma = 300KRAD(Si)
4. Gamma = 10KRAD(Si) for “D”, 100KRAD(Si) for “R”. Neutron = 3E13
5. Gamma = 1000KRAD(Si). Neutron = 3E13
6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS
7. Gamma data taken 12/19/89 on TA 17731 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA,
PA 19401
8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989
9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988
FRS9130D, FRS9130R, FRS9130H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FRS9130R | 6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRS9140D | 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRS9140H | 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRS9140R | 11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRS9230D | 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRS9130R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRS9140D | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRS9140H | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRS9140R | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:11A, -100V, 0.315 Ohm, Rad Hard, P-Channel Power MOSFETs |
| FRS9230D | 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs |
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