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參數(shù)資料
| 型號(hào)： | FRX130H4 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Radiation Hardened N-Channel Power MOSFETs |
| 中文描述： | 6 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CERAMIC, LCC-18 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 35K |
| 代理商： | FRX130H4 |
1
FRX130D, FRX130R,
FRX130H
Radiation Hardened
N-Channel Power MOSFETs
April 1998
Features
6A, 100V, r
DS(ON)
=
0.180
Second Generation Rad Hard MOSFET Results From
New Design Concepts
Gamma
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Defined End-Point Specs at 300K RAD (Si) and
1000K RAD (Si)
- Performance Permits Limited Use to 3000K RAD (Si)
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
Photo Current
- 1.50nA Per-RAD (Si)/s Typically
Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm
2
- Usable to 3E14 Neutrons/cm
2
Ordering Information
Description
The Intersil has designed a series of SECOND GENERA-
TION hardened power MOSFETs of both N-Channel and
P-Channel enhancement types with ratings from 100V to
500V, 1A to 60A, and on resistance as low as 25m
. Total
dose hardness is offered at 100K RAD (Si) and 1000K RAD
(Si) with neutron hardness ranging from 1E13n/cm
2
for
500V product to 1E14n/cm
2
for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without
current limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (n
o
) exposures. Design and processing efforts are
also directed to enhance survival to heavy ion (SEU) and/or
dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages
other than shown above. Reliability screening is available
as either non TX (commercial), TX equivalent of MIL-S-
19500, TXV equivalent of MIL-S-19500, or space equiva-
lent of MIL-S-19500. Contact the Intersil High-Reliability
Marketing group for any desired deviations from the data
sheet.
Symbol
Package
18 LEAD CLCC
PART NUMBER
PACKAGE
BRAND
FRX130D1
18 Ld CLCC
FRX130D1
FRX130D3
18 Ld CLCC
FRX130D3
FRX130R1
18 Ld CLCC
FRX130R1
FRX130R3
18 Ld CLCC
FRX130R3
FRX130R4
18 Ld CLCC
FRX130R4
FRX130H4
18 Ld CLCC
FRX130H4
D
G
S
File Number
3144.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
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| FRX130R | Radiation Hardened N-Channel Power MOSFETs |
| FRX130R1 | Radiation Hardened N-Channel Power MOSFETs |
| FRX130R3 | Radiation Hardened N-Channel Power MOSFETs |
| FRX130R4 | Radiation Hardened N-Channel Power MOSFETs |
| FS-CB33RD | SINGLE DIGIT LED DISPLAYS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FRX130R | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened N-Channel Power MOSFETs |
| FRX130R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened N-Channel Power MOSFETs |
| FRX130R2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | LLCC |
| FRX130R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened N-Channel Power MOSFETs |
| FRX130R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened N-Channel Power MOSFETs |
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