參數(shù)資料
型號： FRX130R4
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： Radiation Hardened N-Channel Power MOSFETs
中文描述： 6 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/5頁
文件大?。?/td> 35K
代理商： FRX130R4
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FRX130D, R, H
100
100
6
4
18
±
20
11.4
4.5
0.09
18
6
18
-55 to 150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
C
= 100
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100
μ
H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
JC
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 1mA, V
GS
= 0V
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
I
D
= 1mA, V
DS
= V
GS
2.0
4.0
V
Gate-Body Leakage Forward
I
GSSF
V
GS
= +20V
-
100
nA
Gate-Body Leakage Reverse
I
GSSR
V
GS
= -20V
-
100
nA
Zero Gate Voltage Drain Current
I
DSS1
I
DSS2
I
DSS3
V
DS
= 100V, V
GS
= 0
V
DS
= 80V, V
GS
= 0
V
DS
= 80V, V
GS
= 0, T
C
= 125
o
C
-
-
-
-
1
0.025
0.25
μ
A
Rated Avalanche Current
I
AR
Time = 20
μ
s
-
-
18
A
Drain to Source On-State Volts
V
DS(ON)
V
GS
= 10V, I
D
= 6A
-
-
1.130
V
Drain to Source On Resistance
r
DS(ON)
V
GS
= 10V, I
D
= 4A
-
-
0.180
Turn-On Delay Time
t
d(ON)
V
DD
= 50V, I
D
= 6A
-
-
30
ns
Rise Time
t
r
Pulse Width = 3
μ
s
-
-
100
Turn-Off Delay Time
t
d(OFF)
Period = 300
μ
s, Rg = 25
-
-
200
Fall Time
t
f
0
≤
V
GS
≤
10 (See Test Circuit)
-
-
100
Gate-Charge Threshold
Q
g(TH)
V
DD
= 50V, ID = 6A
I
GS1
= I
GS2
0
≤
V
GS
≤
20
1
-
4
nc
Gate-Charge On State
Q
g(ON)
17
-
70
Gate-Charge Total
Q
gM
32
-
128
Plateau Voltage
V
GP
3
-
12
V
Gate-Charge Source
Q
gS
3
-
14
nc
Gate-Charge Drain
Q
gD
8
-
32
Diode Forward Voltage
V
SD
I
D
= 6A, V
GD
= 0
0.6
-
1.8
V
Reverse Recovery Time
t
rr
I = 6A; di/dt = 100A/
μ
s
-
-
400
ns
Junction To Case
R
θ
JC
-
-
11
o
C/W
Junction To Ambient
R
θ
JA
Free Air Operation
-
-
250
FRX130D, FRX130R, FRX130H
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