參數(shù)資料
型號： FS100R12KT3
廠商： INFINEON TECHNOLOGIES AG
元件分類： IGBT 晶體管
英文描述： IGBT-Module
中文描述： 140 A, 1200 V, N-CHANNEL IGBT
封裝： ECONOPACK-35
文件頁數(shù)： 1/8頁
文件大小： 271K
代理商： FS100R12KT3
1
Technische Information / technical information
IGBT-Module
IGBT-modules
FS100R12KT3
prepared by: Mark Münzer
approved by: Robert Severin
date of publication: 2003-4-8
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C
T = 25°C
I òó
I
100
140
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
200
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
480
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
I = 100 A, V = 15 V, TY = 25°C
I = 100 A, V = 15 V, TY = 125°C
V ùèú
1,70
1,90
2,15
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 4,00 mA, V = V, TY = 25°C
Vúì
5,0
5,8
6,5
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
0,90
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
7,5
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
7,10
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
0,30
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1200 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 100 A, V = 600 V
V = ±15 V, Róò = 3,9 , TY = 25°C
V = ±15 V, Róò = 3,9 , TY = 125°C
tá óò
0,26
0,29
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 100 A, V = 600 V
V = ±15 V, Róò = 3,9 , TY = 25°C
V = ±15 V, Róò = 3,9 , TY = 125°C
t
0,03
0,05
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 100 A, V = 600 V
V = ±15 V, Ró = 3,9 , TY = 25°C
V = ±15 V, Ró = 3,9 , TY = 125°C
tá ó
0,42
0,52
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 100 A, V = 600 V
V = ±15 V, Ró = 3,9 , TY = 25°C
V = ±15 V, Ró = 3,9 , TY = 125°C
t
0,07
0,09
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 100 A, V = 600 V, L = 70 nH
V = ±15 V, Róò = 3,9 , TY = 25°C
V = ±15 V, Róò = 3,9 , TY = 125°C
Eóò
10,0
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 100 A, V = 600 V, L = 70 nH
V = ±15 V, Ró = 3,9 , TY = 25°C
V = ±15 V, Ró = 3,9 , TY = 125°C
Eó
10,0
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 900 V, Vèà = V -Lù ·di/dt
I
400
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,26
K/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FS100R12KT3_04 制造商:EUPEC 制造商全稱:EUPEC 功能描述:EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS100R12KT4 功能描述:IGBT 模塊 IGBT 1200V 100A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS100R12KT4_B11 功能描述:IGBT 模塊 IGBT 1200V 100A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS100R12KT4G 功能描述:IGBT 模塊 N-CH 1.2KV 100A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FS100R12KT4G_B11 功能描述:IGBT 模塊 N-CH 1.2KV 100A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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