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參數(shù)資料
| 型號(hào)： | FS1AS-18A |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 1 A, 900 V, 15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | FS1AS-18A |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS1AS-18A
HIGH-SPEED SWITCHING USE
0
0.4
0.8
1.2
1.6
2.0
0
4
8
12
16
20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
–1
10
0
2
3
5 7
10
1
2
3
5 7
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
T
C
= 25°C
75°C
125°C
V
DS
= 10V
Pulse Test
10
0
10
1
2
3
5
7
10
2
2
3
5
7
2
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
10
3
5
3
7
2
2
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
3
–1
10
0
2
3
5 7
10
1
2
3
5 7
10
1
5
7
10
2
2
3
5
7
2
3
t
d(off)
t
f
t
d(on)
t
r
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50
0
10
20
30
40
50
0
4
8
12
16
20
I
D
= 2A
T
C
= 25°C
Pulse Test
1A
0.5A
0
10
–2
2
4
8
12
16
20
10
–1
3 5 7
2
10
0
3 5 7
2
10
1
3 5 7
V
GS
= 10V
T
C
= 25°C
Pulse Test
20V
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
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