參數(shù)資料
型號: FS2ASJ-3
廠商: POWEREX INC
元件分類: JFETs
英文描述: Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: 2 A, 150 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MP-3, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 38K
代理商: FS2ASJ-3
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
10
1
3
2
5
7
10
2
2
3
5
7
10
3
2
3
2
5
7
10
0
2
10
1
3 5 7
3 5 7
2
10
2
3 5 7
2 3
Ciss
Coss
Crss
Tch = 25
°
C
V
GS
= 0V
f = 1MH
Z
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
–1
10
0
2
3 4 5 7
10
1
2
3 4 5 7
t
d(off)
t
d(on)
t
r
Tch = 25
°
C
V
DD
= 80V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
10
–1
10
0
2
3 4 5 7
10
1
2
3 4 5 7
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
T
C
= 25
°
C
75
°
C
125
°
C
V
DS
= 5V
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
0
2
4
6
8
10
I
D
= 3A
2A
1A
Tc = 25
°
C
Pulse Test
0
2
4
6
8
10
0
2
4
6
8
10
Tc = 25
°
C
V
DS
= 10V
Pulse Test
0
10
–2
2
0.2
0.4
0.6
0.8
1.0
10
–1
3 5 7
2
10
0
3 5 7
2
10
1
3 5 7
V
GS
= 4V
10V
Tc = 25
°
C
Pulse Test
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