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參數資料
| 型號： | FS30ASJ-06 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 30 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-3, 3 PIN |
| 文件頁數： | 3/4頁 |
| 文件大小： | 39K |
| 代理商： | FS30ASJ-06 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30ASJ-06
HIGH-SPEED SWITCHING USE
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
I
D
= 50A
T
C
= 25
°
C
Pulse Test
30A
10A
0
10
20
30
40
50
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
2 3
V
GS
= 4V
T
C
= 25
°
C
Pulse Test
10V
0
10
20
30
40
50
0
2
4
6
8
10
T
C
= 25
°
C
V
DS
= 10V
Pulse Test
10
0
10
1
2
3
5 7
10
2
2
3
4
4 5 7
10
0
10
1
2
3
5
4
7
10
2
2
3
5
4
7
T
C
= 25
°
C
75
°
C
125
°
C
V
DS
= 10V
Pulse Test
10
1
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3
3
5 7
2
Ciss
Coss
Crss
Tch = 25
°
C
f = 1MH
Z
V
GS
= 0V
10
0
10
1
2
3 4 5 7
10
2
2
3 4 5 7
10
1
10
2
2
3
4
5
7
10
3
2
3
4
5
7
t
d(off)
t
d(on)
t
r
T
ch
= 25
°
C
V
DD
= 30V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FS30ASJ-06F | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS30ASJ-06F(#B00) | 制造商:Renesas Electronics Corporation 功能描述: |
| FS30ASJ-06F-T13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS30ASJ2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-252 |
| FS30ASJ-2 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH-SPEED SWITCHING USE |
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