參數(shù)資料
型號(hào)： FS30KMJ-3
廠商： POWEREX INC
元件分類： JFETs
英文描述： Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述： 30 A, 150 V, 0.086 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-220FN, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 43K
代理商： FS30KMJ-3
Feb.1999
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
MITSUBISHI Nch POWER MOSFET
FS30KMJ-3
HIGH-SPEED SWITCHING USE
V
μ
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
150
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
66
69
0.99
38
3000
320
160
22
42
280
130
1.0
—
100
—
±
0.1
0.1
2.0
86
90
1.29
—
—
—
—
—
—
—
—
1.5
4.17
—
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 150V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 10V
I
D
= 15A, V
GS
= 4V
I
D
= 15A, V
GS
= 10V
I
D
= 15A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 80V, I
D
= 15A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 15A, V
GS
= 0V
Channel to case
I
S
= 30A, dis/dt = –100A/
μ
s
PERFORMANCE CURVES
0
10
20
30
40
50
0
200
50
100
150
5V
0
10
20
30
40
50
0
1
2
3
4
5
V
GS
= 10V
T
C
= 25°C
Pulse Test
4V
3V
P
D
= 30W
0
4
8
1.2
1.6
2.0
0
0.4
0.8
1.2
1.6
2.0
T
C
= 25°C
Pulse Test
2.5V
3V
2V
P
D
= 30W
V
GS
= 10V
5V 4V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
2
10
1
3 5 7
2
10
2
3 5 7
2
10
3
3 5 7
2
10
0
3
5
7
10
1
2
3
5
7
10
2
2
3
2
3
5
7
tw = 10
m
s
100
m
s
1ms
10ms
DC
T
C
= 25°C
Single Pulse
100ms
相關(guān)PDF資料
PDF描述
FS10UMA-5A Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS30SM-3 HIGH-SPEED SWITCHING USE
FS30SM-3 Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS30SM-5 HIGH-SPEED SWITCHING USE
FS30SM-5 Nch POWER MOSFET HIGH-SPEED SWITCHING USE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FS30KMJ-3(#B00) 制造商:Renesas Electronics Corporation 功能描述:
FS30KMJ-3-A8 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET
FS-30R 8 OHM 功能描述:揚(yáng)聲器與變頻器 SS 1.3-8KHz 8 OHM RoHS:否 制造商:PUI Audio 產(chǎn)品:Speakers 類型:Electromagnetic 頻率:900 Hz to 12 kHz 聲壓級(jí):88 dBA 阻抗:8 Ohms 功率額定值:1.2 W 形狀:Round 端接類型:Solder Pad 直徑:15 mm 長(zhǎng)度: 寬度: 深度:4.4 mm 磁體材料:Neodymium Iron Boran (NdFeB) 圓錐體材料:Mylar
FS30R06KL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 30A I(C)
FS30R06VE3 功能描述:IGBT 模塊 IGBT-MODULE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*