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參數(shù)資料
| 型號： | FS3KMA-5A |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | N溝道功率MOSFET高速開關(guān)使用 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 39K |
| 代理商： | FS3KMA-5A |
Jan. 2000
MITSUBISHI Nch POWER MOSFET
FS3KMA-5A
HIGH-SPEED SWITCHING USE
PRELIMINARY
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
PERFORMANCE CURVES
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
250
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
1.5
2.25
2.5
300
35
8
15
10
45
20
1.5
—
—
±
0.1
1
4.0
2.0
3.0
—
—
—
—
—
—
—
—
2.0
5.0
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 250V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 1.5A, V
GS
= 10V
I
D
= 1.5A, V
GS
= 10V
I
D
= 1.5A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 150V, I
D
= 1.5A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 1.5A, V
GS
= 0V
Channel to case
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
°
C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
–1
7
10
0
5
3
7
2
10
1
5
3
7
2
5
3
7
2
10
1
3
5 7
2
10
2
3
5 7
2
3
5
2
T
C
= 25
°
C
Single Pulse
100
μ
s
tw =
10
μ
s
1ms
10ms
DC
0
1
2
3
4
5
0
4
8
12
16
20
V
GS
= 20V
P
D
= 25W
T
C
= 25
°
C
Pulse Test
10V
4V
5V
6V
8V
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
V
GS
= 20V
10V
T
C
= 25
°
C
Pulse Test
5V
6V
8V
4V
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