參數(shù)資料
型號(hào)： FS3VS-9
廠商： POWEREX INC
元件分類： JFETs
英文描述： Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述： 3 A, 450 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-220S, 3 PIN
文件頁數(shù)： 2/4頁
文件大小： 41K
代理商： FS3VS-9
Feb.1999
100
80
60
40
20
0
200
150
100
50
0
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
2 3 5 710
1
2 3 5 710
2
2 3 5 710
3
2
T
C
= 25°C
Single Pulse
tw=10μs
100μs
1ms
10ms
DC
5
4
3
2
1
00
4
8
12
16
20
P
D
=60W
T
C
= 25°C
Pulse Test
V
GS
=20V
10V
8V
6V
5V
10
8
6
4
2
00
10
20
30
40
50
P
D
= 60W
T
C
= 25°C
Pulse Test
V
GS
=20V
10V
8V
6V
5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
MITSUBISHI Nch POWER MOSFET
FS3VS-9
HIGH-SPEED SWITCHING USE
I
D
= 1mA, V
GS
= 0V
I
G
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
25V, V
DS
= 0V
V
DS
= 450V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 1A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 1A, V
GS
= 0V
Channel to case
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
450
±
30
—
—
2
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
3
2.7
2.7
1.5
300
35
6
13
10
30
30
1.5
—
—
—
±
10
1
4
3.5
3.5
—
—
—
—
—
—
—
—
2.0
2.08
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
PERFORMANCE CURVES
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