參數(shù)資料
型號(hào): FS4KM-12
廠商: POWEREX INC
元件分類: JFETs
英文描述: Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: 4 A, 600 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-220FN, 3 PIN
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 45K
代理商: FS4KM-12
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS4KM-12
HIGH-SPEED SWITCHING USE
10
8
6
4
2
00
4
8
12
16
20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
1
7
5
3
2
10
–1
10
–1
2 3
5 7 10
0
10
0
7
5
3
2
2 3
5 7 10
1
T
C
= 25°C
V
DS
= 10V
Pulse Test
125°C
75°C
40
32
24
16
8
00
4
8
12
16
20
I
D
= 8A
T
C
= 25°C
Pulse Test
6A
4A
2A
0
10
–1
2 3
57 10
0
2 3 5 710
1
2 3 5 710
2
10
8
6
4
2
T
C
= 25°C
Pulse Test
V
GS
= 10V
20V
2 3 5 7 10
2
10
2
10
1
7
5
3
2
2 3 5 7 10
1
2 3 5 7 10
0
2 3
10
3
7
5
3
2
7
5
3
Ciss
Tch = 25°C
f = 1MHz
V
GS
= 0V
Coss
Crss
2 3
5 7 10
0
10
3
7
5
3
2
10
2
7
5
2 3
5 7 10
1
10
–1
10
1
3
2
Tch = 25°C
V
DD
= 200V
V
GS
= 10V
R
GEN
= R
GS
= 50
t
f
t
d(off)
t
r
t
d(on)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
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