參數(shù)資料
型號(hào): FS4VS-12
廠商: Mitsubishi Electric Corporation
英文描述: HIGH-SPEED SWITCHING USE
中文描述: 高速開(kāi)關(guān)使用
文件頁(yè)數(shù): 4/4頁(yè)
文件大小: 41K
代理商: FS4VS-12
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS4VS-12
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
1.4
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
20
16
12
8
4
00
8
16
24
32
40
V
DS
= 100V
400V
200V
Tch = 25°C
I
D
= 4A
20
16
12
8
4
00
0.8
1.6
2.4
3.2
4.0
T
C
=125°C
25°C
75°C
V
GS
= 0V
Pulse Test
10
0
7
5
3
2
10
–1
–50
10
1
7
5
3
2
0
50
100
150
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
10
–4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
23 57
23 57
23 57
23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10
–2
P
DM
tw
D= T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
T
t
(
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
D
B
D
B
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FS4VS-12 Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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