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參數(shù)資料
| 型號(hào)： | FS50AS-03 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector Cable Assembly; Connector Type A:Circular Receptacle; Connector Type B:Stripped End Leads; Cable Length:10ft RoHS Compliant: Yes |
| 中文描述： | 50 A, 30 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-3, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 37K |
| 代理商： | FS50AS-03 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50AS-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
0
10
20
30
40
50
0
200
50
100
150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V 10V 8V
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
7V 6V
10V
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
10
0
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
0
3 5 7
2
10
1
3 5 7
2
10
2
3 5 7
2
3
2 3
tw = 10
m
s
T
C
= 25°C
Single Pulse
100
m
s
10ms
1ms
DC
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
2.0
5V
6V
T
C
= 25°C
Pulse Test
P
D
= 35W
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1.0
4V
5V
T
C
= 25°C
Pulse Test
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
V
μ
A
mA
V
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
30
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
17
0.425
23
1300
500
240
25
120
55
68
1.0
—
60
—
±
0.1
0.1
4.0
23
0.575
—
—
—
—
—
—
—
—
1.5
3.57
—
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 30V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 25A, V
GS
= 10V
I
D
= 25A, V
GS
= 10V
I
D
= 25A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 15V, I
D
= 25A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 25A, V
GS
= 0V
Channel to case
I
S
= 25A, dis/dt = –50A/
μ
s
PERFORMANCE CURVES
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FS50ASH03 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 50A I(D) | TO-252 |
| FS50ASJ03 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 50A I(D) | TO-252 |
| FS50ASJ-03 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH-SPEED SWITCHING USE |
| FS50ASJ-03F | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
| FS50ASJ-03F-T13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Nch Power MOS FET |
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