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參數(shù)資料
| 型號： | FS6S |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Fairchild Power Switch(FPS) |
| 中文描述： | 飛兆半導體功率開關（FPS） |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 218K |
| 代理商： | FS6S |
FS6S-SERIES FS6S0965RT/FS6S1265RB
3
Electrical Characteristics (SenseFET Part)
(Ta = 25
°
C unless otherwise specified)
Parameter
FS6S0965RT
Drain Source Breakdown Voltage
Symbol
Conditions
Min.
Typ.
Max.
Unit
BV
DSS
V
GS
= 0V, I
D
= 50
μ
A
V
DS
=Max., Rating, V
GS
=0V
V
DS
= 0.8Max., Rating,
V
GS
= 0V, T
C
= 125
°
C
V
GS
= 10V, I
D
= 4.5A
V
DS
= 50V, I
D
= 4.5A
650
-
-
-
-
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
200
-
-
300
μ
A
Static Drain-Source On Resistance
(1)
Forward Transconductance
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
R
DS(on)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
-
-
-
-
-
-
-
-
-
1.1
-
1300
135
25
25
75
130
70
1.2
-
-
-
-
-
-
-
-
S
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
pF
V
DD
= 0.5BV
DSS
, I
D
= 9.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
= 10V, I
D
= 9.0A,
V
DS
= 0.5BV
DSS
(MOSFET
switching time is
essentially independent of
operating temperature)
nS
Qg
-
45
-
nC
Qgs
-
8
-
Gate-Drain (Miller) Charge
Qgd
-
22
-
FS6S1265RB
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 50
μ
A
V
DS
=Max, Rating, V
GS
= 0V
V
DS
= 0.8Max, Rating,
V
GS
= 0V, T
C
= 125
°
C
V
GS
= 10V, I
D
= 4.5A
V
DS
= 50V, I
D
= 4.5A
650
-
-
-
-
V
μ
A
Zero Gate Voltage Drain Current
I
DSS
200
-
-
300
μ
A
Static Drain-Source on Resistance
(1)
Forward Transconductance
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
R
DS(on)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
-
-
-
-
-
-
-
-
-
0.7
-
1820
185
32
38
120
200
100
0.9
-
-
-
-
-
-
-
-
S
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
pF
V
DD
= 0.5BV
DSS
, I
D
= 12.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
= 10V, I
D
= 12.0A,
V
DS
= 0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
nS
Qg
-
60
-
nC
Qgs
-
10
-
Gate-Drain (Miller) Charge
Qgd
-
30
-
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|---|---|
| FS6X0420R | Fairchild Power Switch (FPSTM) |
| FS6X0420RJ | Fairchild Power Switch (FPSTM) |
| FS6X0420RJX | Fairchild Power Switch (FPSTM) |
| FS6X0720RJ | Fairchild Power Switch (FPSTM) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FS6S0765RCB | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Fairchild Power Switch(FPS) |
| FS6S0765RCBTU | 功能描述:電源開關 IC - 配電 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| FS6S0765RCB-TU | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Fairchild Power Switch(FPS) |
| FS6S0765RCBYDTU | 功能描述:電源開關 IC - 配電 RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時間（最大值）:400 us 關閉時間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23-5 |
| FS6S0765RCB-YDTU | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Fairchild Power Switch(FPS) |
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